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Preliminary Technical Information
Linear L2 TM Power
MOSFET with extended
FBSOA
IXTH30N60L2
IXTQ30N60L2
IXTT30N60L2
V DSS
I D25
R DS(on)
= 600V
= 30A
≤ 240m Ω
N-Channel Enhancement Mode
Avalanche rated
TO-247
Symbol
V DSS
V DGR
V GSS
V GSM
I D25
Test Conditions
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Transient
T C = 25 ° C
Maximum Ratings
600
600
± 20
± 30
30
V
V
V
V
A
TO-3P
(TAB)
I DM
I A
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
80
30
A
A
G
D
S
(TAB)
E AS
P D
T J
T C = 25 ° C
T C = 25 ° C
2
540
-55 to +150
J
W
° C
TO-268
T JM
T stg
+150
-55 to +150
° C
° C
G
S
T L
T SOLD
1.6mm (0.063in) from case for 10s
Plastic body for 10s
300
260
° C
° C
(TAB)
M d
Weight
Mounting torque (TO-247&TO-3P)
TO-247
1.13/10
6.0
Nm/lb.in.
g
G = Gate
S = Source
D = Drain
TAB = Drain
TO-3P
TO-268
5.5
4.0
g
g
Features
Designed for linear operation
International standard packages
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Avalanche rated
Molding epoxies meet UL 94 V-0
BV DSS
V GS(th)
I GSS
V GS = 0V, I D = 1mA
V DS = V GS , I D = 250 μ A
V GS = ± 20V, V DS = 0V
600
2.5
4.5
± 100
V
V
nA
flammability classification
Guaranteed FBSOA at 75 ° C
Applications
I DSS
R DS(on)
V DS = V DSS
V GS = 0V T J = 125 ° C
V GS = 10V, I D = 0.5 ? I D25 , Note 1
50 μ A
300 μ A
240 m Ω
Solid state circuit breakers
Soft start controls
Linear amplifiers
Programmable loads
Current regulators
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DS100101(01/09)
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相关代理商/技术参数
IXTT30N60P 功能描述:MOSFET 30.0 Amps 600 V 0.24 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT360N055T2 功能描述:MOSFET 360Amps 55V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT36N50P 功能描述:MOSFET 36.0 Amps 500 V 0.17 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT36P10 功能描述:MOSFET -36 Amps -100V 0.075 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT40N50L2 功能描述:MOSFET 40 Amps 500V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT440N055T2 功能描述:MOSFET N-Channel Trench Gate TrenchT2 MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT48P20P 功能描述:MOSFET -48.0 Amps -200V 0.085 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT500N04T2 功能描述:MOSFET Trench T2 Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube